本学院学术人员

本学院学术人员

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汪文豪

发布日期：2024-10-17 点击次数：

个人简介：

汪文豪，1995年皇冠hg8868老版本3月出生于安徽安庆，2024年皇冠hg8868老版本毕业于安徽大学，获得工学博士学位。主要研究方向为氧化物薄膜晶体管的制备及其在逻辑电路和人工突触中的应用。

发表论文：

[1] Wang W. H., He G., Wang L. N., Xu X. F., Zhang Y. C., Solution-Driven HfLaOx-Based Gate Dielectrics for Thin Film Transistors and Unipolar Inverters[J]. IEEE Transactions on Electron Devices, 2021, 68(9): 4437-4443.

[2] Wang W. H., He G., Yu H., Gao Q., Wang L. N., Xu X. F., Zhang Y. C., Wu X. Y., He B.， Enhanced Electrical Performance and Stability of La-Doped Indium Oxide-Based Thin-Film Transistors and Application Explorations [J]. Physica Status Solidi (A), 2022, 219(3): 2100590.

[3] Wang W. H., He G., Li Y. J., Jiang S. S., Liu Y. M., Gao Q., Zhang Y. C., All-Solution Driven Thin-Film Transistor with Low Power Dissipation for Logic Electronics and Neuronal Synapse[J]. IEEE Transactions on Electron Devices, 2023, 70(7): 3590-3597.

[4] Wang W. H., He G., Jiang S. S., Fang Z. B., Fu C., Li Y. J., Ion-Doped Polyviny Alcohol (PVA) Based Thin Film Transistor for Logic Electroncis and Neuronal Synapse[J]. IEEE Transactions on Electron Devices, 2024, 71(6): 3852-3858.

[5] Wang W. H., Wang S., Lv J. G., Zhao M., Zhang M., He G., Fang C. X., Li L. L., Sun Z. Q., Enhanced photoresponse and photocatalytic activities of graphene quantum dots sensitized Ag/TiO₂thin film[J]. Journal of the American Ceramic Society, 2018, 101:5469-5476.

[6] Jiang S. S., He G., Wang W. H.*, Zhu M. M., Chen Z. Q., Gao Q., Liu Y. M., Ultralow Thermal-Budget-Driven IWO-Based Thin-Film Transistors and Application Explorations [J]. Nanomaterials, 2022, 12: 3243.

[7] Zhang C., He G., Fang Z. B., Wang W. H., Zhang Y. C., Xia Y. F., Yang B., Performance Modulation in All-Solution-Driven InGaOx/HfGdOx Thin film Transistors and Exploration in Low-Voltage-Operated Logic Circuits[J]. IEEE Transactions Electron Devices, 2020, 67(10):4238-4244.

[8] Yang B., He G., Gao Q., Wang W. H., Zhang Y. C., Xia Y. F., Xu X. F., Wang L. N., Zhang M., Illumination Interface Stability of Aging-Diffusion-Modulated High Performance InZnO/DyO_x Transistors and Exploration in Digital Circuits[J]. Journal Materials & Science Technology, 2021, 87:143-154.

[9] Xia Y. F., He G., Wang W. H., Gao Q., Liu Y. M., Low Voltage Operating Field-Effect Transistor and Integrated Logic Circuits Based on In2O3 Nanofiber Networks[J]. IEEE Transactions on Electron Devices, 2021, 68(5): 2522-2529.

[10] Yang B., He G., Wang W. H., Zhang Y. C., Zhang C., Xia Y. F., Xu X. F., Diffusion Activated High Performance ZnSnO/Yb₂O₃ Thin Film Transistors and Application in Low Voltage-Operated Logic Circuits[J]. Journal Materials & Science Technology, 2021, 70: 49-58.

[11] Wang L. N., He G., Wang W. H., Zhang Y. C., High-Performance Thin Film Transistors and Inverters Based on ALD-Derived Al2O3-Passivated CeO₂ Bilayer Gate Dielectric[J]. IEEE Transactions on Electron Devices, 2022, 69(3): 1065-1068.

[12] Zhang Y. C., He G., Wang L. N., Wang W. H., Xu X. F., Liu W. J., Ultraviolet-Assisted Low-Thermal-Budget-Driven α‑InGaZnO Thin Films for High Performance Transistors and Logic Circuits[J]. ACS Nano, 2022, 16: 4961-4971.

[13] Wang L. N., He G., Jiang S. S., Wang W. H., Xu X. F., Liu Y. M., Gao Q., Enhanced Electrical Performance and Low Frequency Noise of In2O3 Thin-Film Transistors Using Al₂O₃/CeGdO_x Bilayer Gate Dielectrics[J]. IEEE Transactions Electron Devices, 2022, 69(6): 3169-3174.

[14] He B., He G., Hu Q. Q., Wang W. H., Li Y. J., Gao Q., Zhang Y. C., Intermittent O₂ Plasma Treatment as a Novel Strategy to Optimize the Electrical Properties of Nanofibers-Based Transistors[J]. IEEE Transactions Electron Devices, 2023, 70(8): 4231-4235.

[15] Wu X. Y., He G., Wang W. H., Wang. L. N., Xu X. F., Gao Q., Liu Y. M., Jiang S. S., Electrical Performance Enhancement and Low-Frequency Noise Estimation of In2O3-Based Thin Film Transistor Based on Doping Engineering[J]. IEEE Transactions Electron Devices, 2 023, 70(1): 105-112.

[16] Zhu M. M., He G., Fu C., Hu Q. Q., Cheng Z. Q., Wang W. H., Jiang S. S., Implement of BCM Learning Based on Room Temperature Derived α-IGZO Synaptic Transistors[J]. IEEE Transactions Electron Devices, 2023, 70(12): 6301-6306.

[17] Wang L. N., He G., Fu C., Wang W. H., Jiang S. S., Xu X. F., Li Y. J., Improved Electrical Performance of In2O3-Based Thin Film Transistors via MXene Intercalation and Application Exploration in Logic Inverters[J]. IEEE Transactions Electron Devices, 2024, 71(1): 600-606.

[18] Xu X. F., He G., Wang L. N., Wang W. H., Fu C., Li Y. J., Effect of Oxygen Plasma Treatment on the Performance of GQDs-Modulated InGaZnO Thin Film Transistors[J]. IEEE Transactions Electron Devices, 2024, 71(6): 3697-3704.